Dislocation network at InN∕GaN interface revealed by scanning tunneling microscopy

Determination of buried dislocation structures by scanning tunneling microscopy

Using scanning tunneling microscopy on Cu/Ru~0001! thin films we have located the depth at which the cores of misfit dislocations lie below the film surface. The procedure is based on matching areas with unknown structure to areas with a known stacking sequence in the same film. Our results show that dislocations occur not only at the Cu/Ru interface, but also at various levels within the Cu fi...

Scanning Tunneling Microscopy at Solid-Liquid Interfaces

(2n × 1) Reconstructions of TiO2(011) Revealed by Noncontact Atomic Force Microscopy and Scanning Tunneling Microscopy

We have used noncontact atomic force microscopy (NC-AFM) and scanning tunneling microscopy (STM) to study the rutile TiO2(011) surface. A series of (2n × 1) reconstructions were observed, including two types of (4 × 1) reconstruction. High-resolution NC-AFM and STM images indicate that the (4 × 1)-α phase has the same structural elements as the more widely reported (2 × 1) reconstruction. An ar...

Scanning tunneling microscopy of interface properties of Bi2Se3 on FeSe.

We investigate the heteroepitaxial growth of Bi(2)Se(3) films on FeSe substrates by low-temperature scanning tunneling microscopy/spectroscopy. The growth of Bi(2)Se(3) on FeSe proceeds via van der Waals epitaxy with atomically flat morphology. A striped moiré pattern originating from the lattice mismatch between Bi(2)Se(3) and FeSe is observed. Tunneling spectra reveal the spatially inhomogene...

In-situ scanning tunneling microscopy of the semiconductor-electrolyte interface

The great reactivity o f semiconductor surfaces and the easy formation o f oxide layers make in-situ STM imaging o f tlie semiconductors/electrolyte interface difficult at a high resolution. Additionally, STM imaging o f such interfaces requires some care as far tunneling conditions are concerned. The paper analyses this question with the system SiINaOH to illustrate the latest advances concern...